Beilstein J. Nanotechnol.2016,7, 1368–1376, doi:10.3762/bjnano.7.128
that can later be used in drain current model is highlighted as a major advantage of the model.
Keywords: draincurrentcompactmodel; interface trap distribution; metal-oxide-graphene field-effect transistor (MOGFET); surface potential; Introduction
Graphene has recently attracted a lot of attention
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Figure 1:
(a) Schematic of MOGFET device. (b) Equivalent capacitive circuit of typical capacitances in MOGFET....